In addition to 840nm emitting GaAs/GaAlAs quantum well
structures, GaInAsN/GaAs quantum well and GaInAs(N)/GaAs quantum dot
based structures are developed using molecular beam epitaxy. The goal
is to extend the GaAs optoelectronic applications toward 1.3 – 1.55µm.
Real-time thickness control for VCSEL multilayers can be achieved by
means of the Tunable Optical Reflectometry technique with a white light
source.
Fabrication Technology
The technological process for laser diodes and vertical
micro-cavity devices is mastered. In particular AlOx wet oxidation of
AlAs is exploited to generate a buried dielectric aperture which leads
to an efficient electrical and optical confinement. Polymer
nano-imprint is used to produce submicronic patterns on the surface of
fluorides and GaAs, in collaboration with the NanoAddressing group. The
aim is to imprint polymer gratings in view of achieving optical
functions for fluorides, to tailor the growth of semiconducting low
dimensionality strained objects or to produce photonic crystals.
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