Team leader: Patrick TOUNSI (Lecturer INSA).
Full-time researchers: Patrick AUSTIN (Professor UPS), Marise BAFLEUR (CNRS Research Director), Jean-Marie DORKEL (Professor INSA), Henri TRANDUC (CNRS Researcher), Nicolas NOLHIER (Lecturer UPS), Jean-Marie DILHAC (Professor INSA).
Post-doc: Christophe SALAMERO, Francesc MADRID-LOZANO.
PhD students: Philippe ARTILLAN, Albert CESARI, Rodolphe DE MAGLIE, Yuan GAO, Amine BENAZZI, Wassim HABRA, Nicolas LACRAMPE, Lena SAINT MACARY, Béatrice BERNOUX.
In power electronics domain, the modern components are hard-pressed to the maximum of their capacities in order to minimize the weight and the dimensions of the devices for energy management. In addition, even if the recent components undergo important constraints (temperature cycling, over voltage, degraded operation...), a requirement for reliability is fundamental in order to guarantee the safety of systems and persons. An optimized and competitive design must make use of realistic and efficient models.
The modeling methodology that was chosen a long time ago by ISGE group is based on the fine analysis of the physical phenomena which condition the operation of power switches (MOS, IGBT, diodes...). This type of modeling aims to consider in the most realistic possible way the couplings between the various phenomena in order to model all the operating modes. Thus, the electrical characteristics (current and voltage forms of waves) can be modeled according to the temperature of the active zones of the chips. In addition, the temperature, which depends at the same time on the power dissipated and on the environment (case, boundary conditions), is modeled with considerations of the 3D effects.
 |  | | NPT IGBT regions to model | IGBT model with temperature considerations
implemented in Saber |  |   | | VHDL-AMS thermal compact model | 3D thermal modeling |
|
|
| | | |
