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MOLECULAR BEAM EPITAXY
Our molecular beam epitaxy system is focussed on the growth of III/V GaAs based materials.
The two machines are connected by ultra-high-vacuum. They stand inside the LAAS clean room (10,000 class - ISO7).
| Growing apparatus : |
RIBER 2300
effusion cells :
Ga, In, Al
2xAs
H plasma cell
20kV RHEED
Masse spectrometer
Ion pump
Turbo pump |
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RIBER 32P
effusion cells:
Ga, In, 2xAl
As (cracker)
Si, Be
N plasm cell
10kV RHEED
Mass spectrometre
Reflectometry
Low temperature pyrometer
Ion pump
Cryo pump
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| Caracterisation means : |
Riber auger, under UHV |
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| Room temperature photoluminescence |
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| Reflectivity |
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| Know-How : |
Epitaxy of photonic components :
- Quantum well lasers up to 1.3µm emission wavelength (GaInAsN)
- Vertical cavity surface emitting lasers (VCSEL)
- Photonic crystal lasers
Growth on (100), (111)A, (111)B, and (110) surfaces
Growth of nitrides on different oriented surfaces.
Growth of SK InAs/GaAs quantum dots
Surface decontamination and regrowth. |
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