|
PLASMA ETCHING
The plasma etching area has 4 etcher tools like ICP-RIE (Inductively Coupled Plasma).
One STS’ ICP system combines a high conductance, high vacuum compatible process chamber with a patented ICP source to produce a very high ion density at low pressures.
- ICP source (13.56 MHz, 1000 W) with integrated automatic matching network
- RF bias (13.56 MHz, 600 W)
- He-backside cooling, mechanical clamping
Three Aviza Technology’ ICP automatic and batch systems. Theses systems combine a high conductance, high vacuum compatible process chamber with a patented ICP source to produce a very high ion density at low pressures.
- ICP source (13.56 MHz, 600 W) with integrated automatic matching network
- RF bias (13.56 MHz, 600 W)
- He-backside cooling, electrostatic clamping
| Equipments : |
STS Multiplex
Deep RIE with Bosch process
Range of etched depth <1mm |
 |
Aviza Technology Omega 201
SiO2, Si3N4, SiOxNy, Si-Poly, implanted Si-Poly implanté, SiB
Range of etched depth: ~10nm - 2µm
Resist masks only |
|
|
Aviza Technology Omega 201
GaAs, GaAlAs, AlAs
Range of etched depth : ~10nm - 10µm
Resist masks only
Intellemetrix reflectometry:
End point detection by laser reflectometry
|
 |
Aviza Technology Omega 201
Polymers, Métals, Diamond, Quartz (pyrex, quartz, fused silica) ...
Range of etched depth <10µm
Resist and metals masks
Horiba Jobin Yvon Plasmascope :
OES (Optical Emission Spectroscopy).
spectrum 190nm-870nm |
 |
Tepla 300
Resist stripping (controled by mono wavelenghOES )
Surface treatment
|
 |
| Know-How : |
Bosch process for Deep Trench (Aspect Ratio < 30) |
 |
Standards process with CF4, CHF3, SF6 chemistry
|
 |
| Standards process for III-V multi layers materials using Cl chemistry |
 |
|
|
|
