THERMAL TREATMENT

21 Tubes  ( 7 furnaces stacks) and 1 PECVD Reactor are located in the thermal treatment area.

Those equipments are dedicated  for  microelectronics (MOS Technology) and Microsystems components fabrication   The  oldest ones are mostly laboratory furnaces (20cm of flat zone)  for 4’’ wafers. The last equipments (8 tubes (2 furnaces stacks)) are industrial type (50 cm of flat zone for 6’’wafers)


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Equipments :
AET Furnaces for annealing  (4’’ wafers)     (free  access) AsGa annealing tube Polyimide annealing tube Metals annealing tube
TEMPRESS furnaces (4’’ wafers) SiGe  annealing tube Al annealing tube Phosphorus diffusion tube
AET Oxidation  furnaces   (4’’ wafers) Silicon oxidation and  boron drive in  tube Silicon oxidation and  phophorus drive in furnace Oxidation of low doped level  Silicon wafer
6’’ oxidation and dopant drive inCentrotherm furnaces   Oxidation of low doped level  Silicon wafer Silicon oxidation and  boron drive in  tube Silicon oxidation and  phophorus drive in  tube Phosphorus diffusion tube     Centrotherm Furnaces for annealing and LPCVD (6”Wafers) Al annealing tube SiOxNy LPCVD tube Si3N4 LPCVD tube Si  Poly  LPCVD tube
TEMPRESS Furnaces for LPCVD  (4’’ wafers) LPCVD Tube for  research Si3N4 LPCVD Tube Si Poly LPCVD Tube
Scrubber
LPCVD Vertical Furnace Boron doped Si Poly  LPCVD Tube
PECVD Reactor from STS for SiO2 and Si3N4 deposition

Staff :

Bernard ROUSSET (Research Engineer - Area responsible) Laurent BOUSCAYROL (Engineer assistant)

know-How :

Silicon oxyde for MOS technology Driving of p and n dopants Phosphorus Diffusion Undoped polysilicon deposition Si3N4 and SiNx  LPCVD Deposition Si3N4 and SiO2 PECVD Deposition Metals annealing