ION IMPLANTATION

The ion implantation consists in modifying the properties of a material by the insertion of ions in volume. In micro-electronics, it makes it possible to dope semiconductors materials. It is also used for other applications such as surface treatment.

At LAAS the equipment is an ions beam type.

Principle :

Starting from a gas source, solid or liquid, containing the atom to be implanted, a plasma is created. An electric field applied to the exit of this source allows the extraction of the ions. This ionic beam crosses then a magnetic field where the ion to be implanted is selected, according to his atomic mass. Then the beam is accelerated until the energies ranging between 10 and 200 kV (in the case of our implanter) then focused and finally swept on all the surface of the sample.

Equipment :

AXCELLIS (EATON)
NOVA 4206 type

Staff :

Eric IMBERNON (Research Engineer - Area responsible)
Jean-Christophe MARROT (Technician)

Know-How :

We carry out mainly implantation of Boron, Arsenic, Phosphorus, Germanium, Silicon, Argon, Magnesium and Oxygen in various materials (Si, GaAs, etc).

Ions up to the atomic mass 125 can be treated for varying amounts of 10¹¹ ions/cm² to some 10¹⁶ions/cm².

Masking is carried out by photosensitive resists.

The implantations of Boron, Arsenic and Phosphorus are mainly used for the creation of the sources/drains of MOS transistors and anodes/cathodes of IGBT devices.

Implantations of Si and Ge are used for the amorphisation.

We also carry out implantations at weak energy (10 kV) of Oxygen for applications of surface treatment.
IGBT power component

Power micro disjoncter