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Atomic Scale Modeling and Simulation

Atomic Scale Modeling and Simulation

Our challenge is the predictive modeling dedicated to atomically precise technology for the following topics:

  • oxidation (Si, SiGe), growth and self assembled monolayers
  • biomolecular interactions

For non biological systems, we have developed multi-scale strategies combining ab initio, kinetic Monte Carlo and mesoscopic modelling tools. For biomolecules, we have developed a new treatment of molecular flexibility (Static Modes) which is based on the concept of “induced-fit” and authorizes the blind prediction of the conformational response of a molecule submitted to an external excitation. The approach is validated on the protease HIV-1 and constrained DNA.

During this period, our main achievements are :

  • inorganic materials: Si oxidation, Ge condensation, SnO2 surfaces for sensing, High-k materials deposition, Si nanodots.
  • organic/inorganic interfaces: PNIPAM molecules and SAMs (Self Assembled Monolayers)
  • Biomolecules: development of Staic Modes, Free access to static modes on a web Data Bank (www.laas.fr/FLEXIBLE).
  • Software produced: FLEXIBLE, HIKAD & OXCAD (transferred to CEA DAM), Sn02_CAD.


(a) Opening/closing movement of the flaps


(b) cover of EPJ January 2009

Partnerships:

  • Inside the LAAS:
    • gas sensing modeling (M2D partnership); biomolecular interactions (RIS), PNIPAM (N2IS),
  • National level:
    • Establishment of a joint research team (ERC: Equipe de Recherche Commune) with CEA DAM, CEA-LETI (nanodots), LPPM-Orsay (oxidation)
    • ANR : OSIGE-SIM, LN3M, Jeune chercheur, NANOBIOMOD, ITAV ALMA
  • International level:
    • Finland, : ALEBOND (VTL)
    • US: CNRS-NSF (Rutgers University); University of Texas Dallas, University of Southern California. 


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LAAS CNRS - 7 avenue du Colonel Roche - 31077 Toulouse Cedex 4 (France)
Tel. (33) 05 61 33 62 00 - Fax: (33) 05 61 55 35 77 - w3master@laas.fr
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